Alexandria Digital Research Library

An overview of hgcdte mbe defects and analysis of defect size

Author:
Olsson, Kurt Robert
Degree Grantor:
University of California, Santa Barbara. Electrical & Computer Engineering
Degree Supervisor:
Christopher Palmstrom
Place of Publication:
[Santa Barbara, Calif.]
Publisher:
University of California, Santa Barbara
Creation Date:
2013
Issued Date:
2013
Topics:
Engineering, Materials Science
Keywords:
HgCdTe
MBE
Genres:
Dissertations, Academic and Online resources
Dissertation:
M.S.--University of California, Santa Barbara, 2013
Description:

HgCdTe is the most widely used material for high performance infrared detection applications. Growth of HgCdTe epitaxial layers by molecular beam epitaxy (MBE) has ushered in advanced devices that take advantage of the unique properties of the material. Formation of defects during the growth process is one of the largest drawbacks to this technology, and must be minimized to increase device operability. In this paper, the defects encountered in HgCdTe are categorized, along with formation mechanisms and possible means of reduction. A new method of defect identification is proposed, which takes advantage of full wafer defect mapping capabilities. A correlation between the thickness of the grown film and the size of defects initiated at the substrate surface is found. This allows further defect information to be extracted from the size and density of the defects.

Physical Description:
1 online resource (81 pages)
Format:
Text
Collection(s):
UCSB electronic theses and dissertations
ARK:
ark:/48907/f3mp51dz
ISBN:
9781303731525
Catalog System Number:
990041153180203776
Rights:
Inc.icon only.dark In Copyright
Copyright Holder:
Kurt Olsson
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